Method for manufacturing a resistive random access memory device

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United States of America Patent

PATENT NO 9871198
SERIAL NO

14825209

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Abstract

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A method for manufacturing a resistive memory device is disclosed and comprises following steps. Firstly, a bottom electrode is formed over a substrate. Next, an oxidation process is performed to the bottom electrode to form a metal oxide layer, wherein a hydrogen plasma and an oxygen plasma are provided during the oxidation process. Then, a top electrode is formed on the metal oxide layer.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Feng-Min Hsinchu, TW 75 293
Lin, Yu-Yu New Taipei, TW 71 451

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