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Abstract

A thin-film transistor includes an oxide semiconductor layer, a gate insulating film, a gate electrode, and a source-drain electrode. The oxide semiconductor layer includes a channel region and a low-resistance region that has an electric resistance lower than an electric resistance of the channel region. The gate insulating film is provided on the oxide semiconductor layer. The gate electrode is provided on the gate insulating film and opposed to the channel region of the oxide semiconductor layer. The gate electrode includes a first electrode layer and a second electrode layer in order from the gate insulating film. The first electrode layer has a first width that is along a channel length and greater than a second width of the second electrode layer along the channel length. The source-drain electrode is electrically coupled to the low-resistance region of the oxide semiconductor layer.

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