Integrated structures containing vertically-stacked memory cells

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United States of America Patent

PATENT NO 9761599
APP PUB NO 20170053986A1
SERIAL NO

14827695

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Abstract

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Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Guangyu Gavin Boise, US 1 13
Koveshnikov, Sergei Boise, US 7 56
Liu, Haitao Boise, US 332 1454
Mouli, Chandra Boise, US 291 3855
Pavlopoulos, Dimitrios Boise, US 20 104

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