Forming a gate contact in the active area
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United States of America Patent
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-
Jan 1, 2019
Grant Date -
Feb 23, 2017
app pub date -
Aug 23, 2016
filing date -
Aug 19, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of making a semiconductor device includes patterning a fin in a substrate; forming a gate between source/drain regions over the substrate, the gate having a dielectric spacer along a sidewall; removing a portion of the dielectric spacer and filling with a metal oxide to form a spacer having a first spacer portion and a second spacer portion; forming a source/drain contact over at least one of the source/drain regions; recessing the source/drain contact and forming a via contact over the source/drain contact; and forming a gate contact over the gate, the gate contact having a first gate contact portion contacting the gate and a second gate contact portion positioned over the first gate contact portion; wherein the first spacer portion isolates the first gate contact portion from the source/drain contact, and the second spacer portion isolates the second gate contact portion from the source/drain contact.
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