Electrostatically enhanced fins field effect transistors

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United States of America Patent

PATENT NO 9954116
SERIAL NO

15342268

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Abstract

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Non-planar semiconductor devices including semiconductor fins or stacked semiconductor nanowires that are electrostatically enhanced are provided. The electrostatic enhancement is achieved in the present application by epitaxially growing a semiconductor material protruding portion on exposed sidewalls of alternating semiconductor material portions of at least one hard mask capped semiconductor-containing fin structure that is formed on a substrate.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29638
Doris, Bruce B Slingerlands, US 796 13224
Hashemi, Pouya White Plains, US 600 4453
Khakifirooz, Ali Los Altos, US 842 11881
Reznicek, Alexander Troy, US 1407 11147

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