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Abstract

A resist pattern-forming method comprises applying a chemically amplified radiation-sensitive resin composition on a substrate to form a resist film. The chemically amplified radiation-sensitive resin composition comprises a first component solubility in a developer solution of which is capable of being altered by an action of an acid, a second component that is capable of generating an acid by an action of a first exposure light comprising a radioactive ray having a first wavelength, and a sensitizer precursor to be converted into a sensitizer by an action of the first exposure light. A first exposure of the resist film to the first exposure light is conducted. A second exposure of the resist film exposed to the first exposure light, to a second exposure light is conducted. The second exposure light comprises a radioactive ray having a second wavelength longer than the first wavelength.

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First Claim