SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS

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United States of America Patent

SERIAL NO

15014718

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Abstract

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A semiconductor manufacturing method according to an embodiment includes forming a first film on a semiconductor substrate. The semiconductor manufacturing method includes forming cavities in the first film. The semiconductor manufacturing method includes forming a second film inside the cavities by a CVD method using first gas containing a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA MEMORY CORPORATION1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ITO, Kazumasa Kawasaki, JP 127 1922
Itoh, Takanobu Yokkaichi, JP 9 56
Nakanishi, Ryota Yokkaichi, JP 20 46
Omoto, Seiichi Yokkaichi, JP 31 249

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