Dielectric thermal conductor for passivating eFuse and metal resistor

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United States of America Patent

PATENT NO 9620432
SERIAL NO

14843786

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Abstract

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A semiconductor device includes a first dielectric layer formed on a second dielectric layer and planar contacts formed in the second dielectric layer. The planar contacts are spaced apart to form a gap therebetween. The first dielectric layer includes a thermally conductive dielectric layer and is formed on lateral sides of the planar contacts and in the gap. A resistive element is formed between the planar contacts over the gap and in contact with at least the thermally conductive dielectric layer in the gap.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cao, Qing Yorktown Heights, US 149 560
Cheng, Kangguo Schenectady, US 3065 29546
Li, Zhengwen Scarsdale, US 126 1279
Liu, Fei Yorktown Heights, US 381 2233

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