Semiconductor device and manufacturing method thereof
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United States of America Patent
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May 9, 2017
Grant Date -
Mar 2, 2017
app pub date -
Mar 10, 2016
filing date -
Sep 2, 2015
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes a first insulating layer on an underlying layer, a first trench formed in the first insulating layer, and a first graphene layer provided in the first trench. The first trench comprises a bottom surface on the underlying and two side surfaces joined to the bottom surface, formed into a U-shape. The first graphene layer has a stacked structure including a plurality of graphene sheets. The plurality of graphene sheets each include a depression in a central portion. Portions of the graphene sheets located in an edge of the first graphene layer are each extended upward, which is in a direction opposite to the bottom surface.
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