Semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 9865547
SERIAL NO

15068506

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Abstract

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According to one embodiment, a semiconductor device is disclosed. The device includes a graphene layer containing impurities, and including a first region and a second region. The second region has a resistance higher than a resistance of the first region. The second region includes a side surface of an end of the graphene layer. The device further includes a first plug being in contact with the first region.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Isobayashi, Atsunobu Yokkaichi Mie, JP 39 477
Kajita, Akihiro Yokkaichi Mie, JP 77 798
Sakai, Tadashi Yokohama Kanagawa, JP 166 1895

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