Semiconductor devices including nanowire capacitors and fabricating methods thereof

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United States of America Patent

PATENT NO 9646971
APP PUB NO 20170062435A1
SERIAL NO

15162912

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Abstract

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Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Im, Dong-Hyun Suwon-si, KR 46 442
Im, Ki-Vin Seongnam-si, KR 50 1309
Lee, Kong-Soo Hwaseong-si, KR 25 182
Lim, Han-Jin Seoul, KR 51 395
Ma, Jin-Won Hwaseong-si, KR 1 2

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