Importance

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Abstract

A non-volatile memory device comprises a first semiconductor layer extending in a first direction, a first electrode extending over the first semiconductor layer in a second direction crossing the first direction, a second electrode extending over the first semiconductor layer in the second direction, the second electrode being adjacent to the first electrode, a first insulating layer covering the first electrode and the second electrode, and a first interconnection provided on the first insulating layer and electrically connected to the first semiconductor layer. A first insulating layer includes a first portion extending between the first electrode and the second electrode; and the first interconnection has a first opening provided above a first part of the first semiconductor layer located below the first portion of the first insulating layer.

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First Claim