Three-dimensional semiconductor memory device and method for manufacturing the same
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United States of America Patent
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Apr 23, 2019
Grant Date -
Mar 2, 2017
app pub date -
Feb 17, 2016
filing date -
Aug 26, 2015
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Abstract
A semiconductor memory device includes first and second electrode films, an interlayer insulating film, a semiconductor pillar, and a first insulating film. The first electrode film extends in a first direction. The second electrode film is provided separately from the first electrode film in a second direction and extends in the first direction. The interlayer insulating film is provided between the first and the second electrode films. The first insulating film includes first and second insulating regions. A concentration of nitrogen in the first position of the second insulating region is higher than a concentration of nitrogen in the second position between the first position and the semiconductor pillar. A concentration of nitrogen in the first insulating region is lower than the concentration of the nitrogen in the first position.
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