Method for manufacturing semiconductor device
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United States of America Patent
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Apr 18, 2017
Issued Date -
N/A
app pub date -
Jan 15, 2016
filing date -
Sep 1, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes exposing the first sacrificial film on the bottom by removing the second sacrificial film on the bottom. The method includes making a gap between the second sacrificial film and a side surface of the lower portion of the hole by causing etching of the first sacrificial film to progress along the side surface of the lower portion of the hole from the exposed portion on the bottom. The method includes causing an end of at least one portion of the lower layer portion of the etching layer to recede in a diametrical direction of the hole by causing side etching to progress from an end of the lower layer portion of the etching layer exposed in the gap.
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