Semiconductor memory device and method for manufacturing same
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United States of America Patent
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May 23, 2017
Grant Date -
Mar 2, 2017
app pub date -
Feb 18, 2016
filing date -
Aug 26, 2015
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor memory device includes a first stacked body including a plurality of first electrode layers and a plurality of first insulating layers, the first electrode layers separately stacked each other, the first insulating layers provided between the first electrode layers; a second stacked body including a plurality of second electrode layers and a plurality of second insulating layers, the second electrode layers separately stacked each other, the second insulating layers provided between the second electrode layers, the second stacked body separated from the first stacked body in a first direction crossing a stacking direction of the first stacked body; and a first insulating portion provided between the first stacked body and the second stacked body, the first insulating portion provided integrally to the first insulating layers and the second insulating layers.
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