Importance

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Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of conducting layers, a semiconductor layer, a variable resistive element, and a first wiring. The plurality of conducting layers are laminated in a first direction at predetermined pitches. The conducting layers extend in a second direction. The second direction is along the surface of the substrate. The semiconductor layer extends in the first direction. The variable resistive element is disposed at an intersection point between the plurality of conducting layers and the semiconductor layer. The first wiring is opposed to an inside of the semiconductor layer via a gate insulating film. The first wiring extends in the first direction. The semiconductor layer at least includes a first part and a second part. The first part is upward of the conducting layer on a lowermost layer. The second part is downward of the first part. The first part has a first length in a third direction. The third direction is intersecting the first direction and the second direction, and is along the surface of the substrate. The second part has a second length in the third direction. The second length is shorter than the first length.

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First Claim