Method for Producing a Semiconductor Device Having a Beveled Edge Termination

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United States of America Patent

SERIAL NO

15349228

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Abstract

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A method for producing a semiconductor device includes forming a trench that defines a closed loop in a semiconductor body and extends from a first surface into the semiconductor body. The trench has at least one sidewall that is beveled relative to a vertical direction of the semiconductor body. The method further includes removing material of the semiconductor body at least between a bottom of the trench a second surface opposite the first surface of the semiconductor body.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AG9500 VILLACH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirler, Franz Isen, DE 402 3614
Mauder, Anton Kolbermoor, DE 308 1984
Schulze, Hans-Joachim Taufkirchen, DE 599 2437

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