SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A SILICON WAFER
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Aug 25, 2016
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Aug 26, 2015
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Abstract
A semiconductor device is provided that includes a silicon semiconductor body having a drift or base zone of net n-type doping. An n-type doping is partially compensated by 10% to 80% with p-type dopants. A net n-type doping concentration in the drift or base zone is in a range from 1×1013 cm−3 to 1×1015 cm−3. A portion of 5% to 75% of the n-type doping is made up of hydrogen related donors.
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