High frequency semiconductor device
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United States of America Patent
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Jun 27, 2017
Grant Date -
Mar 2, 2017
app pub date -
Aug 17, 2016
filing date -
Aug 28, 2015
priority date (Note) -
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Abstract
A high frequency semiconductor device includes a stacked body, a gate electrode, a source electrode and a drain electrode. The gate electrode includes a bending gate part and a straight gate part. The bending gate part is extended in a zigzag shape and has first and second outer edges. The source electrode includes a bending source part and a straight source part. The bending source part has an outer edge spaced by a first distance from the first outer edge of the bending gate part along a normal direction. The drain electrode includes a bending drain part and a straight drain part. The bending drain part has an outer edge spaced by a second distance from the second outer edge of the bending gate part along the normal direction.
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