Methods and systems for reducing dislocation defects in high concentration epitaxy processes
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United States of America Patent
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Jun 25, 2019
Grant Date -
Mar 2, 2017
app pub date -
Oct 8, 2015
filing date -
Aug 24, 2015
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Abstract
Semiconductor devices including semiconductor junctions and semiconductor field effect transistors that exploit the straining of semiconductor materials to improve device performance are provided. Also described are methods for making semiconductor structures. Dislocation defect-free epitaxial grown structures that are embedded into a semiconductor base are provided. The epitaxial structures can extend beyond the surface of the semiconductor base and terminate at a faceted structure. The epitaxial structures are formed using a multilayer growth process that provides for continuous transitions between adjacent layers.
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