Contact structure and extension formation for III-V nFET

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United States of America Patent

PATENT NO 9799754
SERIAL NO

15350065

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Abstract

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FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the III-V fin structures to form n-type junctions. Leakage through the substrate is addressed by forming p-n junctions adjoining the source/drain regions and isolating the III-V fin structures under the channel regions.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schenectady, US 487 4272
Reznicek, Alexander Troy, US 1407 11147

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