Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings
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United States of America Patent
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Feb 13, 2018
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N/A
app pub date -
Aug 2, 2016
filing date -
Aug 28, 2015
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Abstract
After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.
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