METHOD OF MANUFACTURING SiC SINGLE CRYSTAL

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20170067183A1
SERIAL NO

15122687

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method of manufacturing an SiC single crystal includes the steps of melting a raw material in a crucible (14) to produce an SIC solution (15); and bringing a crystal growth surface (24A) of an SiC seed crystal (24) into contact with the SiC solution to cause an SiC single crystal to grow on the crystal growth surface. The crystal structure of the SiC seed crystal is the 4H polytype. The off-angle of the crystal growth surface is not smaller than 1° and not larger than 4°. The temperature of the SIC solution during growth of the SiC single crystal is not lower than 1650° C. and not higher than 1850° C. The temperature gradient in a portion of the SiC solution directly below the SiC seed crystal during growth of the SiC single crystal is higher than 0° C./cm and not higher than 19° C./cm.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
NIPPON STEEL & SUMITOMO METAL CORPORATIONTOKYO

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KAMEI, Kazuhito Kitakyushu-shi, Fukuoka, JP 38 152
KUSUNOKI, Kazuhiko Nishinomiya-shi, Hyogo, JP 39 97
SEKI, Kazuaki Futtsu-shi, Chiba, JP 14 16

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation