METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
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United States of America Patent
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Mar 9, 2017
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Mar 12, 2015
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Mar 13, 2014
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Abstract
A method of manufacturing an SiC single crystal includes the steps of melting a raw material in a crucible (14) to produce an SIC solution (15); and bringing a crystal growth surface (24A) of an SiC seed crystal (24) into contact with the SiC solution to cause an SiC single crystal to grow on the crystal growth surface. The crystal structure of the SiC seed crystal is the 4H polytype. The off-angle of the crystal growth surface is not smaller than 1° and not larger than 4°. The temperature of the SIC solution during growth of the SiC single crystal is not lower than 1650° C. and not higher than 1850° C. The temperature gradient in a portion of the SiC solution directly below the SiC seed crystal during growth of the SiC single crystal is higher than 0° C./cm and not higher than 19° C./cm.
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