MEMORY DEVICE AND METHOD OF OPERATION THEREOF

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United States of America Patent

APP PUB NO 20170069358A1
SERIAL NO

15046090

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Abstract

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An operation method of a memory device may include writing first data to a plurality of memory cells corresponding to a plurality of word lines, enabling a sense amplifier corresponding to the memory cells and setting second data in the sense amplifier, the second data having the opposite phase of the first data, and sequentially enabling the plurality of word lines for a predetermined time while enabling the sense amplifier.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LEE, Jae-Jin Gyeonggi-do, KR 152 717
YUN, Tae-Sik Gyeonggi-do, KR 27 157

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