Semiconductor memory in which source line voltage is applied during a read operation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 6, 2017
Grant Date -
Mar 9, 2017
app pub date -
Jun 6, 2016
filing date -
Sep 8, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor memory device includes a memory cell, a word line electrically connected to a gate of the memory cell, and a source line electrically connected to a first end of the memory cell. During a read operation of the memory cell, a first voltage is applied to the source line in a first operation to determine whether or not a threshold voltage of the memory cell is above a first threshold value, a second voltage is applied to the source line in a second operation to determine whether or not the threshold voltage of the memory cell is above a second threshold value, and a third voltage is applied to the source line in a third operation to determine whether or not the threshold voltage of the memory cell is above a third threshold value.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully