METHOD FOR CLEANING A PROCESS CHAMBER

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United States of America Patent

APP PUB NO 20170069472A1
SERIAL NO

15120396

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The disclosure relates to a method of cleaning a process chamber of a capacitively coupled plasma reactor, the method comprising: a) Introducing a gas comprising 80-100% in volume of inert gas into the process chamber, wherein said inert gas is selected from the group consisting of neon, argon, krypton, xenon and combinations thereof; and b) Forming a plasma from said inert gas, thereby cleaning said process chamber.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO 107-6325
IMEC VZW3001 LEUVEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
RADISIC, Dunja Leuven, BE 4 1
TAHARA, Shigeru Miyagi, JP 55 782

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