Gate-grounded metal oxide semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9871032
SERIAL NO

14848364

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A gate-grounded metal oxide semiconductor (GGMOS) device is disclosed. The GGMOS is an n-type (GGNMOS) transistor used as an electrostatic discharge (ESD) protection device. The GGMOS includes a base extension region under an elevated source. The elevated source and base extension regions increase Leff and reduce beta, increasing performance of the ESD protection.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Quek, Kiok Boone Elgin Singapore, SG 80 357
Toh, Eng Huat Singapore, SG 256 1730

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 16, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 16, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00