Semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 9716098
SERIAL NO

15070726

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Abstract

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According to one embodiment, a semiconductor device includes a semiconductor substrate and a laminated body. The laminated body is disposed on the semiconductor substrate. The laminated body includes a plurality of conducting layers and a first interlayer insulating film. The first interlayer insulating film is disposed between the plurality of conducting layers. A second interlayer insulating film is formed to cover this laminated body. The second interlayer insulating film includes boron.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kubota, Hiroshi Yokkaichi, JP 279 2506

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