Semiconductor memory device and method for manufacturing same
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United States of America Patent
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Dec 5, 2017
Grant Date -
Mar 9, 2017
app pub date -
Oct 29, 2015
filing date -
Sep 9, 2015
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate, the stacked body including a plurality of electrode layers, a plurality of insulating layers, the plurality of insulating layers having a side surface, a plurality of first conductive films provided between the plurality of electrode layers and the plurality of insulating layers, the plurality of first conductive films having a side surface, and a blocking insulating film, the blocking insulating film including a first portion and a second portion; and a semiconductor film. The first distance between the semiconductor film and the side surface of the plurality of first conductive films is shorter than a second distance between the semiconductor film and the second portion.
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