Semiconductor memory device
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United States of America Patent
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May 28, 2019
Grant Date -
Mar 9, 2017
app pub date -
Feb 1, 2016
filing date -
Sep 8, 2015
priority date (Note) -
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Abstract
A semiconductor memory device according to an embodiment includes a substrate, a stacked body provided on the substrate, a plurality of electrode films being stacked to be separated from each other in the stacked body, a semiconductor pillar piercing the plurality of electrode films, a first insulating film provided between the semiconductor pillar and the electrode films, a second insulating film provided between the semiconductor pillar and the first insulating film; and a third insulating film provided between the first insulating film and the electrode films. The first insulating film includes silicon, nitrogen, oxygen, and carbon.
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