Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
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United States of America Patent
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Jun 16, 2020
Grant Date -
Nov 13, 2014
app pub date -
May 11, 2013
filing date -
Oct 31, 2010
priority date (Note) -
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Abstract
This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy trench filled with a dielectric layer disposed at a distance away from the split-shielded trench gate. The IGBT device further includes a body region extended between the split-shielded trench gate and the dummy trench encompassing a source region surrounding the split-shielded trench gate near a top surface of the semiconductor substrate. The IGBT device further includes a heavily doped N region disposed below the body region and above a source-dopant drift region above a bottom body-dopant collector region at a bottom surface of the semiconductor substrate. In an alternative embodiment, the IGBT may include a planar gate with a trench shield electrode.
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