Semiconductor memory device and method for manufacturing the same
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United States of America Patent
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May 23, 2017
Grant Date -
Mar 9, 2017
app pub date -
Nov 18, 2015
filing date -
Sep 3, 2015
priority date (Note) -
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Abstract
A semiconductor memory device according to an embodiment includes a substrate, a plurality of conductive members containing a metal and provided on the substrate, a stacked body provided in each region between the conductive members, a semiconductor pillar piercing the stacked body, a memory film and internal stress films. The plurality of conductive members extend in a first direction and are separated from each other in a second direction. The internal stress films also extend in the first direction and are separated from each other in the second direction. The first direction and the second direction are parallel to an upper surface of the substrate and intersect each other. The internal stress films contain material having internal stress having the reverse polarity of internal stress of the metal.
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