Lithography pattern forming method using self-organizing block copolymer
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United States of America Patent
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Nov 14, 2017
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app pub date -
Aug 10, 2016
filing date -
Sep 11, 2015
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Abstract
A pattern forming method includes forming a guide mask layer including a first feature having a first opening width, a second feature having a second opening width, a third feature having a third opening width. The first width being less than the second width and greater than the third width. A self-organizing material having a phase-separation period is disposed on the guide mask layer to at least partially fill the first, second, and third features. The self-organizing material is process to the cause phase-separation into first and second polymer portions. The first width is greater than the phase-separation period and the third width is less. A masking pattern is formed on the first layer by removing the second polymer portions and leaving the first polymer portions. The masking pattern is then transferred to the first layer.
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