Semiconductor device including electromagnetic interference (EMI) shielding layer and method for manufacturing the semiconductor device
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United States of America Patent
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Oct 30, 2018
Grant Date -
Mar 16, 2017
app pub date -
Aug 10, 2016
filing date -
Sep 11, 2015
priority date (Note) -
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Abstract
According to one embodiment, in a method for manufacturing a semiconductor device, a semiconductor chip is provided on a first surface of a substrate having the first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. A resin that seals the first surface of the semiconductor chip is formed on the semiconductor chip. A conductive film electrically connectable to a ground potential source is formed on an upper surface of the resin and a side surface of the resin. A metal oxide film or a metal nitride film is formed on the conductive film by depositing metal on the conductive film in an environment containing oxygen or nitrogen.
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