SEMICONDUCTOR MEMORY DEVICE
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United States of America Patent
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Issued Date -
Mar 16, 2017
app pub date -
Aug 10, 2016
filing date -
Sep 10, 2015
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Abstract
A semiconductor memory device includes a first word line that is provided above a semiconductor substrate, a second word line that is provided above the first word line, a plurality of semiconductor pillars that are provided on the semiconductor substrate, and pass through the first and second word lines, and first and second plugs that are provided so that the plurality of semiconductor pillars are interposed therebetween. The semiconductor substrate includes an insulating region that is provided deeper than a bottom of the first plug relative to a surface of the semiconductor substrate, between the first plug and one of the semiconductor pillars.
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