SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Mar 16, 2017
app pub date -
Mar 16, 2016
filing date -
Sep 10, 2015
priority date (Note) -
Abandoned
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Abstract
A semiconductor memory device according to an embodiment includes a laminated body. The laminated body is disposed above a semiconductor substrate. The laminated body includes a plurality of conductive layers and an interlayer insulating film. The interlayer insulating film is disposed between the plurality of conductive layers. A peripheral area of a semiconductor layer is surrounded by the laminated body. The semiconductor layer extends with a first direction as a longitudinal direction. A memory gate insulating film is disposed between the semiconductor layer and the laminated body. The memory gate insulating film includes a charge accumulation film. At least one of the interlayer insulating films disposed between the plurality of conductive layers include a first film and a second film. The first film has a first composition. The second film has a second composition different from the first composition.
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