SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 16, 2017
app pub date -
Feb 12, 2016
filing date -
Sep 11, 2015
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Abstract
Provided is a semiconductor device including a first electrode, a second electrode, a semiconductor substrate having a first plane, a second plane, a first conductivity-type first region, and a plurality of second conductivity-type second regions provided around the first electrode, the second regions being in contact with the first plane, at least a portion of the semiconductor substrate being provided between the first electrode and the second electrode, a first insulating film provided on or above the second regions, the first insulating film including positive charges, and a second insulating film provided on or above the second regions, second insulating film including negative charges.
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