Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20170077227A1
SERIAL NO

14851855

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There are disclosed herein various implementations of a vertical metal-oxide-semiconductor field-effect transistor (MOSFET). Such a vertical MOSFET includes a semiconductor substrate having a drift region situated over a drain, a gate trench and needle field plates extending into the drift region, and source regions situated in respective mesas. In addition, the vertical MOSFET includes mesa contacts having a first width and extending through a first pre-metal dielectric layer to make electrical contact with the mesas. A second pre-metal dielectric layer is situated over the first pre-metal dielectric layer and the mesa contacts. The vertical MOSFET further includes conductive posts having a second width less than the first width and extending through the second pre-metal dielectric layer to make electrical contact with the mesa contacts.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AGSIEMENSSTRASSE 2 VILLACH 9500

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Laforet, David Villach, AT 25 32
Ouvrard, Cedric Villach, AT 20 17
Yip, Li Juin Villach, AT 24 26

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