DEVICES AND METHODS OF CREATING ELASTIC RELAXATION OF EPITAXIALLY GROWN LATTICE MISMATCHED FILMS
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United States of America Patent
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Sep 14, 2015
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Sep 14, 2015
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Abstract
Devices and methods of creating elastic relaxation of epitaxially grown lattice mismatched films for semiconductor devices are provided. One method includes, for instance: obtaining a wafer including a substrate; epitaxially growing at least one first silicon germanium (SiGe) layer over the wafer; and epitaxially growing at least one second SiGe layer over the at least one first SiGe layer. One device includes, for instance: a wafer including a substrate; at least one first layer of semiconductor material disposed over the wafer; at least one second layer of semiconductor material disposed over the at least one first layer of semiconductor material; and at least one first and second openings, each opening extending through the at least one second layer of semiconductor material, the at least one first layer of semiconductor material, and a portion of the substrate.
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