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Abstract

According to embodiments, a semiconductor device includes a first laminated nitride semiconductor layer in which first nitride semiconductor layers and second nitride semiconductor layers are alternately laminated; a third nitride semiconductor layer; a fourth nitride semiconductor layer; a drain electrode; a source electrode; and a gate electrode. The first nitride semiconductor layer is carbon-containing gallium nitride. The second nitride semiconductor layer contains aluminum indium nitride. The third nitride semiconductor layer is on the first laminated nitride semiconductor layer and includes gallium nitride. The fourth nitride semiconductor layer is on the third nitride semiconductor layer and contains aluminum gallium nitride. The drain electrode and the source electrode are on the fourth nitride semiconductor layer. The gate electrode is between the drain electrode and the source electrode.

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First Claim