Importance

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Abstract

A semiconductor device includes a SiC layer having a first surface, a gate insulating film on the first surface, a gate electrode on the gate insulating film, a first SiC region of a first conductivity type in the SiC layer, a second SiC region of a second conductivity type in the first SiC region, a third SiC region of the first conductivity type in the second SiC region, wherein a boundary between the second SiC region and the third SiC region, and the first surface forms a first angle, and a fourth SiC region of the first conductivity type in the third SiC region, having an impurity concentration of the first conductivity type higher than that of the third SiC region, wherein a boundary between the third SiC region and the fourth SiC region, and the first surface forms a second angle that is smaller than the first angle.

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First Claim