Semiconductor device

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United States of America Patent

PATENT NO 9761711
APP PUB NO 20170077298A1
SERIAL NO

15060526

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Abstract

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A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type that is between the first electrode and the second electrode. A second semiconductor region is adjacent to the first semiconductor region along a first direction and includes a second conductivity type material. A first insulating region is provided within the second semiconductor region. A third electrode is provided on the first semiconductor region via a second insulating region.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Kankichi Hanamaki Iwate, JP 1 1
Okumura, Hideki Nonoichi Ishikawa, JP 73 567

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