Method and apparatus for manufacturing semiconductor elements
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United States of America Patent
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Oct 23, 2018
Grant Date -
Mar 16, 2017
app pub date -
Sep 7, 2016
filing date -
Sep 15, 2015
priority date (Note) -
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Abstract
The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.
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