SEMICONDUCTOR DEVICE
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United States of America Patent
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Mar 16, 2017
app pub date -
Mar 8, 2016
filing date -
Sep 11, 2015
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Abstract
According to embodiments, a semiconductor device includes a field-effect transistor; a switch; and a controller. The field-effect transistor includes a substrate; a nitride semiconductor layer on the substrate; a drain electrode and a source electrode on the nitride semiconductor layer; and a gate electrode between the drain electrode and the source electrode. The switch switches a potential of the substrate to a plurality of potentials. The controller controls the switch so as to set one potential among the plurality of potentials based on an input to the drain electrode.
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