SILVER DIFFUSION BARRIER MATERIAL, SILVER DIFFUSION BARRIER, AND SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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Mar 23, 2017
app pub date -
May 14, 2015
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May 16, 2014
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Abstract
By using silicon oxynitride with an oxygen content of 4.2 to 37.5 at % as a material for a barrier layer, adhesiveness similar to that of silicon oxide and an Ag diffusion prevention property similar to that of silicon nitride can be realized. In particular, in a semiconductor device in which a plurality of silicon chips is vertically stacked by through-silicon vias, Ag is prevented from being diffused into Si and adhesiveness to Si becomes favorable when an Ag/polypyrrole complex is used as a conductive filling material used for the formation of a barrier layer provided on the inner surface of the via.
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