Integrated Circuit with a Plurality of Transistors and at Least One Voltage Limiting Structure

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United States of America Patent

APP PUB NO 20170084606A1
SERIAL NO

15273352

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Abstract

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An integrated circuit includes a semiconductor body with a first semiconductor layer, an insulation layer on the first semiconductor layer, and a second semiconductor layer on the insulation layer. The integrated circuit further includes a plurality of transistors each including a load path and a control node The load paths are connected in series, and the plurality of transistors are at least partially integrated in the second semiconductor layer. A voltage limiting structure is connected in parallel with the load path of one of the plurality of transistors, wherein the voltage limiting structure is integrated in the first semiconductor layer and is connected to the one of the plurality of transistors through two electrically conducting vias extending through the insulation layer.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AG9500 VILLACH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Meiser, Andreas Sauerlach, DE 142 422
Priefert, Dirk Moers, DE 4 73
Weis, Rolf Dresden, DE 129 1125

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