Storage Capacitors for Displays and Methods for Forming the Same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

SERIAL NO

15264822

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Embodiments provided herein describe storage capacitors for active matrix displays and methods for making such capacitors. A substrate is provided. A bottom electrode is formed above the substrate. A dielectric layer is formed above the bottom electrode. A top electrode is formed above the dielectric layer. A layer including an amorphous or crystalline material may be formed between the dielectric layer and the top electrode. The bottom electrode may have a thickness of at least 1000 Å, be formed in a gaseous environment of at least 95% argon, and/or not undergo an annealing process before the formation of a dielectric layer above the bottom electrode. The dielectric layer may include a nitrided high-k dielectric material.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
INTERMOLECULAR INC3011 N FIRST STREET SAN JOSE CA 95134

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Le, Minh Huu San Jose, US 77 415
Lee, Sang San Jose, US 72 560
Lin, Howard Santa Clara, US 12 42
Pham, Hieu Santa Clara, US 27 286
Phatak, Prashant San Jose, US 38 1129
Saraf, Gaurav San Jose, US 25 48
Yi, Congwen San Jose, US 1 4

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation