LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR
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United States of America Patent
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Issued Date -
Mar 23, 2017
app pub date -
Aug 31, 2016
filing date -
Sep 18, 2015
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Abstract
The light-emitting device of the present technique includes a substrate, a Group III nitride semiconductor layer disposed on the substrate, a current-blocking layer disposed on the Group III nitride semiconductor layer, a transparent conductive oxide film disposed on the Group III nitride semiconductor layer and the current-blocking layer, a dielectric film covering the Group III nitride semiconductor layer and at least a part of the transparent conductive oxide film, and a phosphor-containing resin coating disposed on the dielectric film. The Group III nitride semiconductor layer has a refractive index greater than that of the transparent conductive oxide film. The transparent conductive oxide film has a refractive index greater than that of the dielectric film. The dielectric film has a refractive index greater than that of the phosphor-containing resin coating. The current-blocking layer has a refractive index smaller than that of the phosphor-containing resin coating.
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