VIA CAPACITOR
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United States of America Patent
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app pub date -
Sep 25, 2015
filing date -
Sep 25, 2015
priority date (Note) -
Abandoned
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Abstract
Various through silicon via capacitors and methods of fabricating the same are disclosed. In one aspect, an apparatus is provided that includes a semiconductor substrate with a portion doped with a first impurity type and a doped region of a second impurity type in the portion of the semiconductor substrate. The doped region is operable to function as a first capacitor plate. A first via hole is in the doped region. The first via hole has a first sidewall. A first insulating layer is on the first sidewall. The first insulating layer is operable to function as a capacitor dielectric. A first conductive via is in the first via hole. The first conductive via is operable to function as a second capacitor plate.
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